On Negative Differential Resistance in Hydrodynamic Simulation of Partially Depleted SOI Transistors
نویسندگان
چکیده
منابع مشابه
Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model
An anomalous output characteristics is observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not present in drift-diffusion simulations and its occurance in measurements is questionable. An explanation of the cause of this effect is given, and a solutio...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2005
ISSN: 0018-9383
DOI: 10.1109/ted.2005.845074